Patent · US Active

Method of making a semiconductor device having a multicomponent oxide

US8647031B2 · kind B2 · utility

149Cited by
8References
20Claims
0Family size

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Inventors

Key dates

Filing dateApr 25, 2012
Grant dateFeb 11, 2014
Priority date—
Expiry dateApr 25, 2032

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T408/5633

Abstract

A semiconductor device includes a metal oxide channel and methods for forming the same. The metal oxide channel includes indium, gallium, and zinc.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.