Germanium ingots/wafers having low micro-pit density (MPD) as well as systems and methods for manufacturing same
US8647433B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 13, 2009 |
| Grant date | Feb 11, 2014 |
| Priority date | — |
| Expiry date | Dec 11, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24355
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Systems and methods are disclosed for crystal growth including features of reducing micropit cavity density in grown germanium crystals. In one exemplary implementation, there is provided a method of inserting an ampoule with raw material into a furnace having a heating source, growing a crystal using a vertical growth process wherein movement of a crystallizing temperature gradient relative to the raw material/crucible is achieved to melt the raw material, and growing, at a predetermined crystal growth length, the material to achieve a monocrystalline crystal, wherein monocrystalline ingots having reduced micro-pit densities are reproducibly provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.