HVPE apparatus and methods for growth of p-type single crystal group III nitride materials

US8647435B1 · kind B1 · utility

Assignee

• Ostendo Technologies, Inc. · US

Inventors

• Vladimir A. Dmitriev · Gaithersburg, US
• Oleg Kovalenkov · Montgomery Village, US
• Vladimir Ivantsov · Gaithersburg, US
• Lisa Shapovalov · Gaithersburg, US
• Alexander Syrkin · Montgomery Village, US
• Anna Volkova · Gaithersburg, US
• Vladimir Sizov
• Alexander Usikov · Rockville, US
• Vitali Soukhoveev · Gaithersburg, US

Key dates

• Filing date: Oct 11, 2007
• Grant date: Feb 11, 2014
• Expiry date: Mar 1, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02636
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

HVPE reactors and methods for growth of p-type group III nitride materials including p-GaN. A reaction product such as gallium chloride is delivered to a growth zone inside of a HVPE reactor by a carrier gas such as Argon. The gallium chloride reacts with a reactive gas such as ammonia in the growth zone in the presence of a magnesium-containing gas to grow p-type group III nitride materials. The source of magnesium is an external, non-metallic compound source such as Cp2Mg.