Conductive metal and diffusion barrier seed compositions, and methods of use in semiconductor and interlevel dielectric substrates
US8647535B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 7, 2011 |
| Grant date | Feb 11, 2014 |
| Priority date | — |
| Expiry date | May 16, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31678
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A metal seed composition useful in seeding a metal diffusion barrier or conductive metal layer on a semiconductor or dielectric substrate, the composition comprising: a nanoscopic metal component that includes a metal useful as a metal diffusion barrier or conductive metal; an adhesive component for attaching said nanoscopic metal component on said semiconductor or dielectric substrate; and a linker component that links said nanoscopic metal component with said adhesive component. Semiconductor and dielectric substrates coated with the seed compositions, as well as methods for depositing the seed compositions, are also described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.