Oxide sintered body and sputtering target
US8647537B2 · kind B2 · utility
5Cited by
5References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 14, 2009 |
| Grant date | Feb 11, 2014 |
| Priority date | — |
| Expiry date | Jun 20, 2030 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B2235/77
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
An oxide sintered body includes indium oxide and gallium solid-solved therein, the oxide sintered body having an atomic ratio “Ga/(Ga+In)” of 0.001 to 0.12, containing indium and gallium in an amount of 80 atom % or more based on total metal atoms, and having an In2O3 bixbyite structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.