Method of forming insulation film using plasma treatment cycles
US8647722B2 · kind B2 · utility
516Cited by
5References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 13, 2009 |
| Grant date | Feb 11, 2014 |
| Priority date | — |
| Expiry date | Dec 1, 2030 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/56
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A film forming cycle based on pulse CVD or ALD is repeated multiple times to form a single layer of insulation film, while a reforming cycle is implemented in the aforementioned process, either once or multiple times per each film forming cycle, by treating the surface of formed film using a treating gas that has been activated by a plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.