Buried oxidation for enhanced mobility
US8647935B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 17, 2010 |
| Grant date | Feb 11, 2014 |
| Priority date | — |
| Expiry date | Sep 28, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
Abstract
A method patterns at least one pair of openings through a protective layer and into a substrate. The openings are positioned on opposite sides of a channel region of the substrate. The method forms sidewall spacers along the sidewalls of the openings and removes additional substrate material from the bottom of the openings. The material removal process creates an extended bottom within the openings. The method forms a first strain producing material within the extended bottom of the openings. The method removes the sidewall spacers and forms a second material within the remainder of the openings between the first strain producing material and the top of the openings. The method removes the protective layer and forms a gate dielectric and a gate conductor on the horizontal surface on the substrate adjacent the channel region. The second material comprises source and drain regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.