Andreas Scholze
12Patents
3h-index
17Co-inventors
49Inventor score
Filing activity: Dec 17, 2010 → Oct 31, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9786765B2 | FINFET having notched fins and method of forming same | Electricity | 7 | Active |
| US9390976B2 | Method of forming epitaxial buffer layer for finFET source and drain junction leakage reduction | Electricity | 5 | Active |
| US9391065B1 | Electrostatic discharge and passive structures integrated in a vertical gate fin-type field effect diode | Electricity | 3 | Active |
| US9536882B2 | Field-isolated bulk FinFET | Electricity | 3 | Active |
| US9601513B1 | Subsurface wires of integrated chip and methods of forming | Electricity | 1 | Active |
| US9704852B2 | Electrostatic discharge and passive structures integrated in a vertical gate fin-type field effect diode | Electricity | 1 | Active |
| US8647935B2 | Buried oxidation for enhanced mobility | Electricity | 0 | Active |
| US11101367B2 | Contact-first field-effect transistors | Electricity | 0 | Active |
| US9786661B2 | Method of forming epitaxial buffer layer for finFET source and drain junction leakage reduction | Electricity | 0 | Active |
| US10249714B2 | Method of forming epitaxial buffer layer for finFET source and drain junction leakage reduction | Electricity | 0 | Active |
| US10297589B2 | Electrostatic discharge and passive structures integrated in a vertical gate fin-type field effect diode | Electricity | 0 | Active |
| US9793272B2 | Method of forming epitaxial buffer layer for finFET source and drain junction leakage reduction and semiconductor device having reduced junction leakage | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.