Semiconductor structure and manufacturing method for the same and ESD circuit
US8648386B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2011 |
| Grant date | Feb 11, 2014 |
| Priority date | — |
| Expiry date | Aug 31, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/611
Abstract
A semiconductor structure and manufacturing method for the same, and an ESD circuit are provided. The semiconductor structure comprises a first doped region, a second doped region, a third doped region and a resistor. The first doped region has a first type conductivity. The second doped region has a second type conductivity opposite to the first type conductivity. The third doped region has the first type conductivity. The first doped region and the third doped region are separated by the second doped region. The resistor is coupled between the second doped region and the third doped region. An anode is coupled to the first doped region. A cathode is coupled to the third doped region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.