Patent · US Active

Memory cell, a method for forming a memory cell, and a method for operating a memory cell

US8649205B2 · kind B2 · utility

4Cited by

2References

26Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Christian Peters · Mountain View, US
Mihail Jefremow · Augsburg, DE
Jan Otterstedt · Unterhaching, DE
Wolf Allers · Munich, DE
Robert Wiesner · Chandler, US

Key dates

Filing date	Feb 10, 2012
Grant date	Feb 11, 2014
Priority date	—
Expiry date	Jul 4, 2032

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10T29/49117
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A memory cell is provided, the memory cell including a first two-terminal memory element; a second two-terminal memory element; a controller circuit configured to program the first two-terminal memory element to one or more states and the second two-terminal memory element to one or more states, wherein a state of the first two-terminal memory element and a state of the second two-terminal memory element are interdependent; and a measuring circuit configured to measure a difference signal between a first two-terminal memory element signal associated with the state of the first two-terminal memory element and a second two-terminal memory element signal associated with the state of the second two-terminal memory element.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.