Method for pulling silicon single crystal
US8652254B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 14, 2008 |
| Grant date | Feb 18, 2014 |
| Priority date | — |
| Expiry date | Apr 4, 2031 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B15/22
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The invention is a method for pulling a silicon single crystal, which is a Czochralski method for growing the silicon single crystal by contacting a seed crystal with a melt and by pulling up, including the steps of: contacting the seed crystal with the melt; forming a necking portion under the seed crystal; and forming the silicon single crystal under the necking portion by increasing a diameter, wherein a pulling rate during forming the necking portion is 2 mm/min or less, and the silicon single crystal with the increased diameter is a boron-doped silicon single crystal having a resistivity of 1.5 mΩ·cm or less at a shoulder portion. Therefore, there can be provided a method of pulling a silicon single crystal without generating defects such as scratches at a wafer surface in the case of processing a boron-doped silicon single crystal ingot with a low resistivity produced by CZ method into a wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.