Patent · US Active

CMP tool implementing cyclic self-limiting CM process

US8652295B2 · kind B2 · utility

0Cited by
2References
14Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 1, 2013
Grant dateFeb 18, 2014
Priority date
Expiry dateJul 1, 2033

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/7684
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A chemical mechanical polishing (CMP) apparatus includes a process controller operable to execute a multi-step CMP algorithm implementing delivering a first chemical composition onto the wafer surface while on a platen for a first time duration, and without removing the wafer from the platen, delivering a second chemical composition different from the first chemical composition onto the wafer surface for a second time duration. CMP is performed with a polishing pad contacting the wafer surface using a slurry including the first chemical composition during the first time duration or the second chemical composition during the second time duration, and a non-polishing process without any contact of the polishing pad to the wafer surface using the other of the first and second chemical composition during the other of the time durations, and repeating the multi-step CMP comprising process a plurality of times on the wafer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.