Method and apparatus for structuring components made of a material composed of silicon oxide

US8652341B2 · kind B2 · utility

Assignee

• FHR ANLAGENBAU GMBH · DE

Inventors

• Thomas Gessner · Plymouth, US
• Andreas Bertz · Thalheim/Erzgebirge, DE
• Reinhard Schubert · Hemsbach, DE
• Thomas Werner · Radebeul, DE
• Wolfgang Hentsch · Radebeul, DE
• Reinhard Fendler · Radebeul, DE
• Lutz Koehler · Radebeul, DE

Key dates

• Filing date: Apr 30, 2009
• Grant date: Feb 18, 2014
• Expiry date: Jun 24, 2030

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C03C2204/08
• WIPO field: Materials, metallurgy
• WIPO sector: Chemistry

Abstract

A method and an apparatus for forming a structure on a component made of a material composed of silicon oxide, especially of silicate glass, glass ceramic or quartz, wherein in accordance with the process at least a first surface of the component a partial removal of the material by plasma etching takes place and during the plasma etching at least at the surface to be etched a substrate temperature is established which is substantially greater than 90° C. but less than the softening temperature of the material. The apparatus is equipped for this purpose with a heater for generating the substrate temperature.