Device manufacturing method, method of making a mask, and mask
US8652710B2 · kind B2 · utility
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2References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 25, 2007 |
| Grant date | Feb 18, 2014 |
| Priority date | — |
| Expiry date | Nov 13, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70433
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In a lithographic device manufacturing method, sub-resolution assist features are provided to equalize the intensities of the diffraction orders that form the image of the pattern on the substrate. In the case of bright lines against a dark field used with a positive tone resist for forming trenches at or near resolution, the assist features may comprise narrow lines equidistantly between the feature lines. In this way an improvement of exposure latitude may be obtained without reduction of DOF.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.