Method for fabricating a FinFET device

US8652894B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Hsien-Hsin Lin · Hsinchu, TW
• Tsz-Mei Kwok · Hsinchu, TW
• Chien-Chang Su · Kaohsiung, TW

Key dates

• Filing date: Nov 9, 2012
• Grant date: Feb 18, 2014
• Expiry date: Nov 9, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/405

Abstract

A FinFET device and method for fabricating a FinFET device is disclosed. An exemplary method includes forming a fin structure on a semiconductor substrate and forming a gate structure on the fin structure. A capping layer is then formed over the semiconductor substrate, fin structure, and gate structure. The capping layer is patterned to form an opening exposing a second portion of the fin structure. An epitaxial layer is grown in the opening and on the second portion of the fin structure. At least one of a source region and a drain region is provided in the epitaxial layer. The method may continue to remove the capping layer.