Semiconductor device with gate trench
US8652904B2 · kind B2 · utility
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1References
20Claims
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Key dates
| Filing date | Sep 20, 2011 |
| Grant date | Feb 18, 2014 |
| Priority date | — |
| Expiry date | Apr 24, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/664
Abstract
A method of manufacturing a semiconductor device is presented. The device has: a gate terminal formed from polysilicon and covered by an insulation layer; and a plug extending through an insulation layer to provide an electrical connection to the gate trench. A metal layer is deposited to cover at least a portion of the insulation layer. The metal layer is then etched to remove the metal layer from above the plug.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.