Patent · US Active

Non-polar III-V nitride semiconductor and growth method

US8652947B2 · kind B2 · utility

4Cited by
27References
19Claims
0Family size

Inventor

Key dates

Filing dateSep 26, 2007
Grant dateFeb 18, 2014
Priority date—
Expiry dateOct 24, 2028

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/0265
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A method for growing flat, low defect density, and strain-free thick non-polar III-V nitride materials and devices on any suitable foreign substrates using a fabricated nanocolumns compliant layer with an HVPE growth process is provided. The method uses a combination of dry and wet etching to create nanocolumns consisting of layers of non-polar III nitride material and other insulating materials or materials used to grow the non-polar III-V nitride materials.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.