Vertical deep ultraviolet light emitting diodes
US8652958B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 7, 2011 |
| Grant date | Feb 18, 2014 |
| Priority date | — |
| Expiry date | Sep 20, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A vertical geometry light emitting diode with a strain relieved superlattice layer on a substrate comprising doped AlXInYGa1-X-YN. A first doped layer is on the strain relieved superlattice layer AlXInYGa1-X-YN and the first doped layer has a first conductivity. A multilayer quantum well is on the first doped layer comprising alternating layers quantum wells and barrier layers. The multilayer quantum well terminates with a barrier layer on each side thereof. A second doped layer is on the quantum well wherein the second doped layer comprises AlXInYGa1-X-YN and said second doped layer has a different conductivity than said first doped layer. A contact layer is on the third doped layer and the contact layer has a different conductivity than the third doped layer. A metallic contact is in a vertical geometry orientation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.