Complementary tunneling field effect transistor and method for forming the same
US8653504B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 28, 2011 |
| Grant date | Feb 18, 2014 |
| Priority date | — |
| Expiry date | Nov 28, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/513
Abstract
A complementary tunneling field effect transistor and a method for forming the same are provided. The complementary tunneling field effect transistor comprises: a substrate; an insulating layer, formed on the substrate; a first semiconductor layer, formed on the insulating layer and comprising first and second doped regions; a first type TFET vertical structure formed on a first part of the first doped region and a second type TFET vertical structure formed on a first part of the second doped region, in which a second part of the first doped region is connected with a second part of the second doped region and a connecting portion between the second part of the first doped region and the second part of the second doped region is used as a drain output; and a U-shaped gate structure, formed between the first type TFET vertical structure and the second type TFET vertical structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.