Flash memory and method for fabricating the same

US8653574B2 · kind B2 · utility

Assignee

• TSINGHUA UNIVERSITY · CN

Inventors

• Ning Cui · Beijing, CN
• Renrong Liang · Beijing, CN
• Jing Wang · Longbeilingcun, CN
• Jun Xu · Nanjing, CN

Key dates

• Filing date: May 22, 2012
• Grant date: Feb 18, 2014
• Expiry date: Jun 5, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/201

Abstract

A flash memory and a method for fabricating the same are provided. The flash memory comprises: a semiconductor substrate; a storage medium layer formed on the semiconductor substrate and comprising from bottom to top: a tunneling oxide layer, a silicon nitride layer and a blocking oxide layer; a semiconductor layer formed on the storage medium layer and comprising a channel region and a source region and a drain region located on both sides of the channel region respectively; and a gate stack formed on the channel region and comprising a gate dielectric and a gate formed on the gate dielectric.