Semiconductor devices and methods of fabricating the same
US8653580B2 · kind B2 · utility
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9References
20Claims
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Key dates
| Filing date | Sep 14, 2012 |
| Grant date | Feb 18, 2014 |
| Priority date | — |
| Expiry date | Sep 14, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/47
Abstract
Semiconductor devices and a methods of fabricating the semiconductor devices are provided. The semiconductor devices may include a pattern on a substrate. The semiconductor devices may also include a capping dielectric layer on the pattern. The semiconductor devices may further include a first nitride layer on the capping dielectric layer. Moreover, the semiconductor devices may include a second nitride layer on the first nitride layer. A concentration of nitrogen in the first nitride layer may be greater than that in the second nitride layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.