Patent · US Active

Semiconductor device comprising metal-based eFuses of enhanced programming efficiency by enhancing metal agglomeration and/or voiding

US8653624B2 · kind B2 · utility

1Cited by

4References

18Claims

0Family size

Assignee

GlobalFoundries Inc. · KY

Inventors

Christian Hennesthal · Meißen, DE
Oliver Aubel · Dresden, DE
Jens Poppe · Radebeul, DE
Holger Pagel · Dresden, DE
Andreas Kurz · Oberursel, DE

Key dates

Filing date	Jul 29, 2013
Grant date	Feb 18, 2014
Priority date	—
Expiry date	Jul 29, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/3011
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

Metal fuses in semiconductor devices may be formed on the basis of additional mechanisms for obtaining superior electromigration in the fuse bodies. To this end, the compressive stress caused by the current-induced metal diffusion may be restricted or reduced in the fuse body, for instance, by providing a stress buffer region and/or by providing a dedicated metal agglomeration region. The concept may be applied to the metallization system and may also be used in the device level, when fabricating the metal fuse in combination with high-k metal gate electrode structures.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.