Local word line driver and flash memory array device thereof
US8654591B2 · kind B2 · utility
7Cited by
0References
5Claims
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Assignee
Inventor
Key dates
| Filing date | Dec 29, 2010 |
| Grant date | Feb 18, 2014 |
| Priority date | — |
| Expiry date | Jul 15, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C8/08
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In a local word line driver of an NOR flash memory and its flash memory array device, the local word line driver is provided for driving a local word line in a sector of a memory array, and the local word line driver has two transistors including a first transistor and a second transistors, and the first and second transistors are NMOS transistors, and thus achieving the effects of reducing the area occupied by circuits on the local word line driver and the die size, and saving the area for the use by memory units.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.