High efficiency epitaxial chemical vapor deposition (CVD) reactor
US8656860B2 · kind B2 · utility
6Cited by
69References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 14, 2010 |
| Grant date | Feb 25, 2014 |
| Priority date | — |
| Expiry date | Oct 4, 2030 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B25/14
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present disclosure presents a chemical vapor deposition reactor having improved chemical utilization and cost efficiency. The wafer susceptors of the present disclosure may be used in a stackable configuration for processing many wafers simultaneously. The reactors of the present disclosure may be reverse-flow depletion mode reactors, which tends to provide uniform film thickness and a high degree of chemical utilization.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.