Patent · US Active

Dual contact metallization including electroless plating in a semiconductor device

US8658494B2 · kind B2 · utility

1Cited by

3References

18Claims

0Family size

Assignee

GlobalFoundries Inc. · KY

Inventors

Kai Frohberg · Meißen, DE
Juergen Boemmels · Heverlee, BE
Matthias Schaller · Dresden, DE
Sven Mueller · Rockenberg, DE

Key dates

Filing date	Aug 11, 2010
Grant date	Feb 25, 2014
Priority date	—
Expiry date	Feb 11, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/3011
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Contact elements of sophisticated semiconductor devices may be formed for gate electrode structures and for drain and source regions in separate process sequences in order to apply electroless plating techniques without causing undue overfill of one type of contact opening. Consequently, superior process uniformity in combination with a reduced overall contact resistance may be accomplished. In some illustrative embodiments, cobalt may be used as a contact metal without any additional conductive barrier materials.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.