Method for manufacturing semiconductor device
US8658504B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 12, 2012 |
| Grant date | Feb 25, 2014 |
| Priority date | — |
| Expiry date | May 23, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
Abstract
According to one embodiment, a method for manufacturing a semiconductor device includes forming a depression in an upper portion of a semiconductor substrate, placing a sacrificial material in the depression, forming a plurality of fins extending in one direction and arranged periodically by selectively removing the semiconductor substrate and the sacrificial material, forming a device isolation insulating film in a lower portion of space between the fins, removing the sacrificial material, forming a gate insulating film on an exposed surface of the fin, and forming a gate electrode. The gate electrode extends in a direction crossing the one direction so as to straddle the fin on the device isolation insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.