Isolation by implantation in LED array manufacturing
US8658513B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 2, 2011 |
| Grant date | Feb 25, 2014 |
| Priority date | — |
| Expiry date | Jul 2, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/831
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An improved method of creating LED arrays is disclosed. A p-type layer, multi-quantum well and n-type layer are disposed on a substrate. The device is then etched to expose portions of the n-type layer. To create the necessary electrical isolation between adjacent LEDs, an ion implantation is performed to create a non-conductive implanted region. In some embodiments, an implanted region extends through the p-type layer, MQW and n-type layer. In another embodiment, a first implanted region is created in the n-type layer. In addition, a second implanted region is created in the p-type layer and multi-quantum well immediately adjacent to etched n-type layer. In some embodiments, the ion implantation is done perpendicular to the substrate. In other embodiments, the implant is performed at an angle.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.