Patent · US Active

On-gate contacts in a MOS device

US8658524B2 · kind B2 · utility

3Cited by

5References

21Claims

0Family size

Assignee

CAMBRIDGE SILICON RADIO LIMITED · GB

Inventors

Rainer Herberholz · Cambridge, GB
David Vigar · Singapore, SG

Key dates

Filing date	Dec 2, 2010
Grant date	Feb 25, 2014
Priority date	—
Expiry date	Dec 2, 2030

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A MOS device, (400) comprising a semiconductor substrate comprising a channel, an electrode (402) insulated from the channel and positioned at least partly over the channel, and at least one contact (403) to the electrode, the at least one contact being positioned at least partly over the channel.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.