Patent · US Active

Method for producing a semiconductor component, and semiconductor component

US8658534B2 · kind B2 · utility

0Cited by

14References

11Claims

0Family size

Assignee

AMS AG · AT

Inventors

Franz Schrank · Graz, AT
Günther Koppitsch · Lieboch, AT
Michael Beutl · Graz, AT
Sara Carniello · Graz, AT
Jochen Kraft · Bruck an der Mur, AT

Key dates

Filing date	Jun 25, 2009
Grant date	Feb 25, 2014
Priority date	—
Expiry date	Dec 8, 2029

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

In an insulation layer of an SOI substrate, a connection pad is arranged. A contact hole opening above the connection pad is provided on side walls and on the connection pad with a metallization that is contacted on top side with a top metal.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.