FinFET and method of fabricating the same
US8659032B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 31, 2012 |
| Grant date | Feb 25, 2014 |
| Priority date | — |
| Expiry date | Feb 28, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The disclosure relates to a fin field effect transistor (FinFET). An exemplary structure for a FinFET comprises a substrate comprising a major surface; a first fin and a second fin extending upward from the substrate major surface to a first height; an insulation layer comprising a top surface extending upward from the substrate major surface to a second height less than the first height, whereby portions of the fins extend beyond the top surface of the insulation layer; each fin covered by a bulbous epitaxial layer defining an hourglass shaped cavity between adjacent fins, the cavity comprising upper and lower portions, wherein the epitaxial layer bordering the lower portion of the cavity is converted to silicide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.