Semiconductor device and method for manufacturing the same
US8659052B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 14, 2012 |
| Grant date | Feb 25, 2014 |
| Priority date | — |
| Expiry date | Sep 14, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3221
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device including a semiconductor substrate in which a diode region and an IGBT region are formed is provided. The diode region includes a first layer embedded in a diode trench reaching a diode drift layer from an upper surface side of the semiconductor substrate, and a second layer which is buried in the first layer and which has a lower end located deeper than a boundary between a diode body layer and the diode drift layer. The second layer pressures the first layer in a direction from inside to outside of the diode trench. A lifetime control region is formed in the diode drift layer at least at the depth of the lower end of the second layer, and a crystal defect density inside the lifetime control region is higher than a crystal defect density outside the lifetime control region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.