Airgap-containing interconnect structure with improved patternable low-K material and method of fabricating
US8659115B2 · kind B2 · utility
10Cited by
25References
23Claims
0Family size
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Key dates
| Filing date | Jun 17, 2009 |
| Grant date | Feb 25, 2014 |
| Priority date | — |
| Expiry date | Dec 6, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/12044
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating an airgap-containing interconnect structure in which a patternable low-k material replaces the need for utilizing a separate photoresist and a dielectric material is provided. Specifically, a simplified method of fabricating single-damascene and dual-damascene airgap-containing low-k interconnect structures with at least one patternable low-k dielectric and at least one inorganic antireflective coating is provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.