Multibit magnetic random access memory cell with improved read margin
US8659938B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 15, 2011 |
| Grant date | Feb 25, 2014 |
| Priority date | — |
| Expiry date | Apr 25, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C13/0002
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic random access memory (MRAM) cell including a magnetic tunnel junction including a tunnel barrier layer between a first magnetic layer having a first magnetization direction, and a second magnetic layer having a second adjustable magnetization to vary a junction resistance of the magnetic tunnel junction from a first to a second junction resistance level; said magnetic tunnel junction further including a switching resistant element electrically connected to the magnetic tunnel junction and having a switching resistance switchable from a first to a second switching resistance level when a switching current is passed through the switching resistant element, such that a resistance of the MRAM cell can have at least four different cell resistance levels depending of the resistance level of the junction resistance and the switching resistance. The disclosed MRAM cell achieves improved read margin and allows for writing at least four different cell resistance levels.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.