Non-volatile memory device formed by dual floating gate deposit

US8664059B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventor

• Erwan Dornel · Fontaine, FR

Key dates

• Filing date: Apr 26, 2012
• Grant date: Mar 4, 2014
• Expiry date: Jun 6, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/035

Abstract

A method includes forming a shallow trench isolation (STI) region in a substrate; depositing a first material such that the first material overlaps the STI region and a portion of a top surface of the STI region is exposed; etching a recess in the STI region by a first etch, the recess having a bottom and sides; depositing a second material over the first material and on the sides and bottom of the recess in the STI region; and etching the first and second material by a second etch to form a floating gate of the device, wherein the floating gate extends into the recess.