Semiconductor structure and method of fabricating the same

US8664060B2 · kind B2 · utility

Assignee

• UNITED MICROELECTRONICS CORP. · TW

Inventors

• An-Chi Liu · Tainan, TW
• Chun-Hsien Lin · Tainan, TW
• Yu-Cheng Tung
• Chien-Ting Lin · Tainan, TW
• Wen-Tai Chiang · Tainan, TW
• Shih-Hung Tsai · Tainan, TW
• Ssu-I Fu
• Ying-Tsung Chen · Hsinchu, TW
• Chih-Wei Chen · Tainan, TW

Key dates

• Filing date: Feb 7, 2012
• Grant date: Mar 4, 2014
• Expiry date: May 16, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6744

Abstract

A semiconductor structure and a method of fabricating the same comprising the steps of providing a substrate, forming at least one fin structure on said substrate, forming a gate covering said fin structure, forming a plurality of epitaxial structures covering said fin structures, performing a gate pullback process to reduce the critical dimension (CD) of said gate and separate said gate and said epitaxial structures, forming lightly doped drains (LDD) in said fin structures, and forming a spacer on said gate and said fin structures.