Patent · US Active

Method for making a thin-film element

US8664084B2 · kind B2 · utility

3Cited by

188References

16Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Chrystel Deguet · Meylan, FR
Laurent Clavelier · Grenoble, FR

Key dates

Filing date	Sep 25, 2006
Grant date	Mar 4, 2014
Priority date	—
Expiry date	Sep 7, 2028

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/2007
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for making a thin-film element includes epitaxially growing a first crystalline layer on a second crystalline layer of a support where the second crystalline layer is a material different from the first crystalline layer, the first crystalline layer having a thickness less than a critical thickness. A dielectric layer is formed on a side of the first crystalline layer opposite to the support to form a donor structure. The donor structure is assembled with a receiver layer and the support is removed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.