Graphene substituted with boron and nitrogen, method of fabricating the same, and transistor having the same
US8664439B2 · kind B2 · utility
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18Claims
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Key dates
| Filing date | Apr 25, 2011 |
| Grant date | Mar 4, 2014 |
| Priority date | — |
| Expiry date | May 22, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6741
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Graphene, a method of fabricating the same, and a transistor having the graphene are provided, the graphene includes a structure of carbon (C) atoms partially substituted with boron (B) atoms and nitrogen (N) atoms. The graphene has a band gap. The graphene substituted with boron and nitrogen may be used as a channel of a field effect transistor. The graphene may be formed by performing chemical vapor deposition (CVD) method using borazine or ammonia borane as a boron nitride (B—N) precursor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.