Bi-directional triode thyristor for high voltage electrostatic discharge protection
US8664690B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 15, 2012 |
| Grant date | Mar 4, 2014 |
| Priority date | — |
| Expiry date | Nov 15, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/713
Abstract
A bi-directional triode thyristor (TRIAC) device for high voltage electrostatic discharge (ESD) protection may include a substrate, an N+ doped buried layer, an N-type well region and two P-type well regions. The N+ doped buried layer may be disposed proximate to the substrate. The N-type well region may encompass the two P-type well regions such that a portion of the N-type well region is interposed between the two P-type well regions. The P-type well regions may be disposed proximate to the N+ doped buried layer and comprise one or more N+ doped plates and one or more P+ doped plates. The portion of the N-type well region that is interposed between the two P-type well regions may comprise one or more P-type portions, such as a P+ doped plate or a P-type implant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.