High voltage semiconductor devices

US8664720B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Mayank Shrivastava · South Burlington, US
• Maryam Shojaei Baghini · Mumbai, IN
• Cornelius Christian Russ · Diedorf, DE
• Harald Gossner · Riemerling, DE
• Ramgopal Rao · Mumbai, IN

Key dates

• Filing date: Aug 25, 2010
• Grant date: Mar 4, 2014
• Expiry date: Jan 13, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/235

Abstract

In one embodiment, the semiconductor device includes a first source of a first doping type disposed in a substrate. A first drain of the first doping type is disposed in the substrate. A first gate region is disposed between the first source and the first drain. A first channel region of a second doping type is disposed under the first gate region. The second doping type is opposite to the first doping type. A first extension region of the first doping type is disposed between the first gate and the first drain. The first extension region is part of a first fin disposed in or over the substrate. A first isolation region is disposed between the first extension region and the first drain. A first well region of the first doping type is disposed under the first isolation region. The first well region electrically couples the first extension region with the first drain.