Patent · US Active

TCAD emulation calibration method of SOI field effect transistor

US8667440B2 · kind B2 · utility

0Cited by

2References

6Claims

0Family size

Assignee

SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY CHINESE ACADEMY OF SCIENCES · CN

Inventors

Zhan Chai · Shanghai, CN
Jing Chen · Shanghai, CN
Jiexin Luo · Shanghai, CN
Qingqing Wu · Shanghai, CN
Xi Wang · Shanghai, CN

Key dates

Filing date	Sep 23, 2011
Grant date	Mar 4, 2014
Priority date	—
Expiry date	Sep 23, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH01L22/20
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A calibration method for a device using TCAD to emulation SOI field effect transistor, where process emulation MOS device structures with different channel lengths Lgate are obtained by establishing a TCAD process emulation program; the process emulation MOS device structures are calibrated according to a TEM test result, a SIMS test result, a CV test result, a WAT test result, and a square resistance test result of an actual device, so as to complete TCAD emulation calibration of key electrical parameters of an SOI field effect transistor. Thereby, providing effective guidance for research, development and optimization of a new process flow are realized.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.