Sputtering target, oxide semiconductor film and semiconductor device
US8668849B2 · kind B2 · utility
27Cited by
1References
18Claims
0Family size
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Key dates
| Filing date | May 10, 2012 |
| Grant date | Mar 11, 2014 |
| Priority date | — |
| Expiry date | May 10, 2032 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B2235/81
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A sputtering target including an oxide sintered body, the oxide sintered body containing indium (In) and at least one element selected from gadolinium (Gd), dysprosium (Dy), holmium (Ho), erbium (Er) and ytterbium (Yb), and the oxide sintered body substantially being of a bixbyite structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.