Method of forming dielectric films, new precursors and their use in semiconductor manufacturing
US8668957B2 · kind B2 · utility
518Cited by
15References
22Claims
0Family size
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Key dates
| Filing date | Mar 16, 2007 |
| Grant date | Mar 11, 2014 |
| Priority date | — |
| Expiry date | Oct 28, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Method of deposition on a substrate, of a metal containing dielectric film comprising a compound of the formula (I):(M11-aM2a)ObNc, (I)wherein 0≦a<1, 0<b≦3, 0≦c≦1, M1 represents a metal selected from (Hf), (Zr) and (Ti); and M2 represents a metal atom atoms, which comprises the following steps:
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.