Nanowire LED structure and method for manufacturing the same
US8669125B2 · kind B2 · utility
17Cited by
25References
26Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 17, 2011 |
| Grant date | Mar 11, 2014 |
| Priority date | — |
| Expiry date | Apr 7, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/762
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A light emitting diode (LED) structure includes a plurality of devices arranged side by side on a support layer. Each device includes a first conductivity type semiconductor nanowire core and an enclosing second conductivity type semiconductor shell for forming a pn or pin junction that in operation provides an active region for light generation. A first electrode layer extends over the plurality of devices and is in electrical contact with at least a top portion of the devices to connect to the shell. The first electrode layer is at least partly air-bridged between the devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.