Semiconductor device and method of manufacturing the same
US8669162B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 21, 2012 |
| Grant date | Mar 11, 2014 |
| Priority date | — |
| Expiry date | Jun 28, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
Abstract
A method of manufacturing a semiconductor device according to an embodiment includes: forming a plurality of semiconductor layers located at a distance from one another on a first insulating film; forming a gate insulating film that covers both side faces and an upper face of each of the semiconductor layers; forming a gate electrode of a polysilicon film to cover the gate insulating film of each of the semiconductor layers; forming a second insulating film on an entire surface; exposing an upper face of the gate electrode by performing selective etching on a portion of the second insulating film; siliciding the gate electrode; and forming a stress applying film that applies a stress in a direction perpendicular to the extending direction of each of the semiconductor layers and parallel to an upper face of the first insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.