Method for improving flatness of a layer deposited on polycrystalline layer
US8669184B2 · kind B2 · utility
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5References
6Claims
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Assignee
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Key dates
| Filing date | Jan 24, 2011 |
| Grant date | Mar 11, 2014 |
| Priority date | — |
| Expiry date | Sep 15, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76834
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Described is a method for improving the flatness of a layer deposited on a doped polycrystalline layer, which includes reducing the grain size of the polycrystalline layer to decrease the out-diffusion amount of the dopant from the polycrystalline layer, and/or reducing the amount of the out-diffusing dopant on the surface of the polycrystalline layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.