Thin film transistors

US8669553B2 · kind B2 · utility

Assignees

• HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. · US
• Oregon State University · US

Inventors

• Chris Knutson · Corvallis, US
• Rick Presley · Bremond, US
• John Wager · Corvallis, US
• Douglas A. Keszler · Corvallis, US
• Randy Hoffman · Corvallis, US

Key dates

• Filing date: Jul 2, 2010
• Grant date: Mar 11, 2014
• Expiry date: Jul 2, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/60

Abstract

A thin-film transistor includes a gate electrode, a gate dielectric disposed on the gate electrode, a channel layer, and a passivation layer. The channel layer has a first surface and an opposed second surface, where the first surface is disposed over at least a portion of the gate dielectric. The channel layer also has a first oxide composition including at least one predetermined cation. The passivation layer is disposed adjacent to at least a portion of the opposed second surface of the channel layer. The passivation layer has a second oxide composition including the at least one predetermined cation of the first oxide composition and at least one additional cation that increases a bandgap of the passivation layer relative to the channel layer.