LED that has bounding silicon-doped regions on either side of a strain release layer

US8669585B1 · kind B1 · utility

Assignee

• Toshiba Techno Center Inc. · JP

Inventors

• Zhen Chen · Stanford, US
• Yi-Min Fu · Taichung, TW

Key dates

• Filing date: Sep 1, 2012
• Grant date: Mar 11, 2014
• Expiry date: Sep 1, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/824

Abstract

A strain release layer adjoining the active layer in a blue LED is bounded on the bottom by a first relatively-highly silicon-doped region and is also bounded on the top by a second relatively-highly silicon-doped region. The second relatively-highly silicon-doped region is a sublayer of the active layer of the LED. The first relatively-highly silicon-doped region is a sublayer of the N-type layer of the LED. The first relatively-highly silicon-doped region is also separated from the remainder of the N-type layer by an intervening sublayer that is only lightly doped with silicon. The silicon doping profile promotes current spreading and high output power (lumens/watt). The LED has a low reverse leakage current and a high ESD breakdown voltage. The strain release layer has a concentration of indium that is between 5×1019 atoms/cm3 and 5×102° atoms/cm3, and the first and second relatively-highly silicon-doped regions have silicon concentrations that exceed 1×1018 atoms/cm3.