Method for producing semiconductor device and semiconductor device having pillar-shaped semiconductor
US8669601B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 11, 2012 |
| Grant date | Mar 11, 2014 |
| Priority date | — |
| Expiry date | Sep 11, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/201
Abstract
A method for producing a semiconductor device includes the steps of forming first and second pillar-shaped semiconductors on a substrate at the same time so as to have the same height; forming a first semiconductor layer by doping a bottom region of the first pillar-shaped semiconductor with a donor or acceptor impurity to connect the first semiconductor layer to the second pillar-shaped semiconductor; forming a circuit element including an upper semiconductor region formed by doping an upper region of the first pillar-shaped semiconductor with a donor or acceptor impurity; forming a first conductor layer in the second pillar-shaped semiconductor; forming first and second contact holes that are respectively connected to the first and second pillar-shaped semiconductors; and forming a wiring metal layer that is connected to the upper semiconductor region and the first conductor layer through the first and second contact holes, respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.