Patent · US Active

Method of processing a contact pad, method of manufacturing a contact pad, and integrated circuit element

US8669666B2 · kind B2 · utility

0Cited by

10References

34Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Markus Hammer · Neu-Ulm, DE
Guenther Ruhl · Regensburg, DE
Andreas Strasser · Graz, AT
Michael Melzl · Neutraubling, DE
Reinhard Goellner · Regensburg, DE
Doerthe Groteloh · Regensburg, DE

Key dates

Filing date	Oct 19, 2010
Grant date	Mar 11, 2014
Priority date	—
Expiry date	Dec 6, 2031

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S438/958
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An integrated circuit includes a substrate. A surface region of the substrate includes a contact pad region. A passivation layer stack includes at least one passivation layer. The passivation layer stack is formed over the surface region and adjacent to the contact pad region. An upper portion of the passivation layer stack is removed in, in a portion of the passivation layer stack proximate the contact pad region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.