Method and system for providing high magnetic flux saturation CoFe films
US8670211B1 · kind B1 · utility
153Cited by
10References
16Claims
0Family size
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Key dates
| Filing date | Jun 21, 2011 |
| Grant date | Mar 11, 2014 |
| Priority date | — |
| Expiry date | Aug 31, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F41/26
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method and system plates CoFeX, where X is an insertion metal. The method and system include providing a plating solution including hydroxymethyl-p-tolylsulfone (HPT). The plating solution being configured to provide a CoFeX film having a high saturation magnetic flux density of greater than 2.3 Tesla and not more than 3 weight percent of X. The method and system also include plating the CoFeX film on a substrate in the plating solution. In some aspects, the plated CoFeX film may be used in structures such as main poles of a magnetic recording head.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.